Advanced Cu chemical displacement technique for SiO(2)-based electrochemical metallization ReRAM application

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO(2)-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insu...

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Detalles Bibliográficos
Autores principales: Chin, Fun-Tat, Lin, Yu-Hsien, You, Hsin-Chiang, Yang, Wen-Luh, Lin, Li-Min, Hsiao, Yu-Ping, Ko, Chum-Min, Chao, Tien-Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4214826/
https://www.ncbi.nlm.nih.gov/pubmed/25364318
http://dx.doi.org/10.1186/1556-276X-9-592

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4214826/
https://www.ncbi.nlm.nih.gov/pubmed/25364318
http://dx.doi.org/10.1186/1556-276X-9-592

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