Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until no...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Sangik, Hwang, Inrok, Oh, Sungtaek, Hong, Sahwan, Kim, Yeonsoo, Nam, Yoonseung, Lee, Keundong, Yoon, Chansoo, Kim, Wondong, Park, Bae Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4217097/
https://www.ncbi.nlm.nih.gov/pubmed/25362933
http://dx.doi.org/10.1038/srep06871

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4217097/
https://www.ncbi.nlm.nih.gov/pubmed/25362933
http://dx.doi.org/10.1038/srep06871

Ejemplares similares