Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the one...

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Detalles Bibliográficos
Autores principales: You, Yao-Hong, Su, Vin-Cent, Ho, Ti-En, Lin, Bo-Wen, Lee, Ming-Lun, Das, Atanu, Hsu, Wen-Ching, Kuan, Chieh-Hsiung, Lin, Ray-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4225452/
https://www.ncbi.nlm.nih.gov/pubmed/25392706
http://dx.doi.org/10.1186/1556-276X-9-596

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4225452/
https://www.ncbi.nlm.nih.gov/pubmed/25392706
http://dx.doi.org/10.1186/1556-276X-9-596

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