Graphene nanoribbon field-effect transistor at high bias

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation,...

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Detalles Bibliográficos
Autores principales: Ghadiry, Mahdiar, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Mohsen, Manaf, Asrulnizam Abd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232815/
https://www.ncbi.nlm.nih.gov/pubmed/25404874
http://dx.doi.org/10.1186/1556-276X-9-604

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232815/
https://www.ncbi.nlm.nih.gov/pubmed/25404874
http://dx.doi.org/10.1186/1556-276X-9-604

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