Graphene nanoribbon field-effect transistor at high bias

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation,...

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Autores principales: Ghadiry, Mahdiar, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Mohsen, Manaf, Asrulnizam Abd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232815/
https://www.ncbi.nlm.nih.gov/pubmed/25404874
http://dx.doi.org/10.1186/1556-276X-9-604
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author Ghadiry, Mahdiar
Ismail, Razali
Saeidmanesh, Mehdi
Khaledian, Mohsen
Manaf, Asrulnizam Abd
author_facet Ghadiry, Mahdiar
Ismail, Razali
Saeidmanesh, Mehdi
Khaledian, Mohsen
Manaf, Asrulnizam Abd
author_sort Ghadiry, Mahdiar
collection PubMed
description Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
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spelling pubmed-42328152014-11-17 Graphene nanoribbon field-effect transistor at high bias Ghadiry, Mahdiar Ismail, Razali Saeidmanesh, Mehdi Khaledian, Mohsen Manaf, Asrulnizam Abd Nanoscale Res Lett Nano Express Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied. Springer 2014-11-06 /pmc/articles/PMC4232815/ /pubmed/25404874 http://dx.doi.org/10.1186/1556-276X-9-604 Text en Copyright © 2014 Ghadiry et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Ghadiry, Mahdiar
Ismail, Razali
Saeidmanesh, Mehdi
Khaledian, Mohsen
Manaf, Asrulnizam Abd
Graphene nanoribbon field-effect transistor at high bias
title Graphene nanoribbon field-effect transistor at high bias
title_full Graphene nanoribbon field-effect transistor at high bias
title_fullStr Graphene nanoribbon field-effect transistor at high bias
title_full_unstemmed Graphene nanoribbon field-effect transistor at high bias
title_short Graphene nanoribbon field-effect transistor at high bias
title_sort graphene nanoribbon field-effect transistor at high bias
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232815/
https://www.ncbi.nlm.nih.gov/pubmed/25404874
http://dx.doi.org/10.1186/1556-276X-9-604
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