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Graphene nanoribbon field-effect transistor at high bias

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation,...

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Detalles Bibliográficos
Autores principales:	Ghadiry, Mahdiar, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Mohsen, Manaf, Asrulnizam Abd
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232815/ https://www.ncbi.nlm.nih.gov/pubmed/25404874 http://dx.doi.org/10.1186/1556-276X-9-604

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