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The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe(2)O(4) thin film. Stable and repeatable resistive switching behavior is acquired at the sam...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232846/ https://www.ncbi.nlm.nih.gov/pubmed/25404869 http://dx.doi.org/10.1186/1556-276X-9-584 |