The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template

A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe(2)O(4) thin film. Stable and repeatable resistive switching behavior is acquired at the sam...

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Detalles Bibliográficos
Autores principales: Jiang, Changjun, Wu, Lei, Wei, WenWen, Dong, Chunhui, Yao, Jinli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232846/
https://www.ncbi.nlm.nih.gov/pubmed/25404869
http://dx.doi.org/10.1186/1556-276X-9-584
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author Jiang, Changjun
Wu, Lei
Wei, WenWen
Dong, Chunhui
Yao, Jinli
author_facet Jiang, Changjun
Wu, Lei
Wei, WenWen
Dong, Chunhui
Yao, Jinli
author_sort Jiang, Changjun
collection PubMed
description A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe(2)O(4) thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect. PACS: 68.37.-d; 73.40.Rw; 73.61.-r
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spelling pubmed-42328462014-11-17 The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template Jiang, Changjun Wu, Lei Wei, WenWen Dong, Chunhui Yao, Jinli Nanoscale Res Lett Nano Express A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe(2)O(4) thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect. PACS: 68.37.-d; 73.40.Rw; 73.61.-r Springer 2014-10-21 /pmc/articles/PMC4232846/ /pubmed/25404869 http://dx.doi.org/10.1186/1556-276X-9-584 Text en Copyright © 2014 Jiang et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Jiang, Changjun
Wu, Lei
Wei, WenWen
Dong, Chunhui
Yao, Jinli
The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
title The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
title_full The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
title_fullStr The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
title_full_unstemmed The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
title_short The resistive switching memory of CoFe(2)O(4) thin film using nanoporous alumina template
title_sort resistive switching memory of cofe(2)o(4) thin film using nanoporous alumina template
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4232846/
https://www.ncbi.nlm.nih.gov/pubmed/25404869
http://dx.doi.org/10.1186/1556-276X-9-584
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