Cargando…
Homogeneous crystalline FeSi(2) films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy
The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111)...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4234272/ https://www.ncbi.nlm.nih.gov/pubmed/24305438 http://dx.doi.org/10.1186/1556-276X-8-510 |