Cargando…

Homogeneous crystalline FeSi(2) films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111)...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zou, Zhi-Qiang, Sun, Li-Min, Shi, Gao-Ming, Liu, Xiao-Yong, Li, Xu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2013
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4234272/ https://www.ncbi.nlm.nih.gov/pubmed/24305438 http://dx.doi.org/10.1186/1556-276X-8-510

Ejemplares similares

Fabrication and Physical Properties of Single-Crystalline Βeta-FeSi(2) Nanowires
por: Yang, Chih-Yung, et al.
Publicado: (2020)

Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)
por: Perova, TS, et al.
Publicado: (2010)

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Tamura, Yosuke, et al.
Publicado: (2015)

Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Wang, Chiu-Yen, et al.
Publicado: (2017)

Origin of Magnetism in γ-FeSi(2)/Si(111) Nanostructures
por: Geng, Liwei D., et al.
Publicado: (2021)

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
por: Liu, Sanjie, et al.
Publicado: (2017)

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
por: Zhong, Aihua, et al.
Publicado: (2018)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
por: Yu, Ing-Song, et al.
Publicado: (2014)

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC
por: Tiberj, Antoine, et al.
Publicado: (2011)

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
por: Li, Tianfeng, et al.
Publicado: (2013)

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires
por: delos Santos, Ramon, et al.
Publicado: (2015)

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
por: Camara, Nicolas, et al.
Publicado: (2011)

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
por: Davydok, Anton, et al.
Publicado: (2012)

Characterization of ultrathin InSb nanocrystals film deposited on SiO(2)/Si substrate
por: Li, Dengyue, et al.
Publicado: (2011)

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
por: Vecchio, Carmelo, et al.
Publicado: (2011)

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
por: Salomon, Damien, et al.
Publicado: (2013)

Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition
por: Zhang, Zhiwei, et al.
Publicado: (2018)

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
por: Wang, Rui, et al.
Publicado: (2007)

Compositional and optical properties of SiO( x ) films and (SiO( x )/SiO( y )) junctions deposited by HFCVD
por: Vázquez-Valerdi, Diana E, et al.
Publicado: (2014)

Flexible carbon nanotube/mono-crystalline Si thin-film solar cells
por: Sun, Huanhuan, et al.
Publicado: (2014)

Ordered GeSi nanorings grown on patterned Si (001) substrates
por: Ma, Yingjie, et al.
Publicado: (2011)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
por: Choi, Won-Young, et al.
Publicado: (2021)

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate
por: Wei, Xianqi, et al.
Publicado: (2013)

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
por: Yuryev, Vladimir A, et al.
Publicado: (2011)

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
por: Gu, Yi, et al.
Publicado: (2014)

The Influence of an Adsorbate Layer on Adatom Diffusion and Island Nucleation: Fe on Si(111)-√3 x √3-Au
por: Paredis, K, et al.
Publicado: (2009)

Systematic Control of Self-Assembled Au Nanoparticles and Nanostructures Through the Variation of Deposition Amount, Annealing Duration, and Temperature on Si (111)
por: Li, Ming-Yu, et al.
Publicado: (2015)

Annealing temperature effect on self-assembled Au droplets on Si (111)
por: Sui, Mao, et al.
Publicado: (2013)

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
por: Lin, Shih-Wei, et al.
Publicado: (2015)

Formation of linearly linked Fe clusters on Si(111)-7 × 7-C(2)H(5)OH surface
por: Ding, Wanyu, et al.
Publicado: (2014)

Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2012)

Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
por: Lo, Shun-Tsung, et al.
Publicado: (2011)

Direct Synthesis of Graphene Dendrites on SiO(2)/Si Substrates by Chemical Vapor Deposition
por: Li, Yingxian, et al.
Publicado: (2020)

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
por: Hasegawa, Mika, et al.
Publicado: (2015)

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
por: Mashanov, Vladimir, et al.
Publicado: (2011)

Electrical and Optical Properties of Nb-doped SrSnO(3) Epitaxial Films Deposited by Pulsed Laser Deposition
por: Li, Kaifeng, et al.
Publicado: (2020)

Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2014)

Cannot write session to /tmp/vufind_sessions/sess_bnjcfklgb6offgps3d7rd3rbt4