Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semicon...

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Detalles Bibliográficos
Autores principales: Zhou, Miao, Ming, Wenmei, Liu, Zheng, Wang, Zhengfei, Yao, Yugui, Liu, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4236754/
https://www.ncbi.nlm.nih.gov/pubmed/25407432
http://dx.doi.org/10.1038/srep07102

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4236754/
https://www.ncbi.nlm.nih.gov/pubmed/25407432
http://dx.doi.org/10.1038/srep07102

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