Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-st...

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Detalles Bibliográficos
Autores principales: Jeong, Seung-Ki, Kim, Myeong-Ho, Lee, Sang-Yeon, Seo, Hyungtak, Choi, Duck-Kyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4244097/
https://www.ncbi.nlm.nih.gov/pubmed/25435832
http://dx.doi.org/10.1186/1556-276X-9-619

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4244097/
https://www.ncbi.nlm.nih.gov/pubmed/25435832
http://dx.doi.org/10.1186/1556-276X-9-619

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