Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwic...

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Detalles Bibliográficos
Autores principales: Yu, Woo Jong, Li, Zheng, Zhou, Hailong, Chen, Yu, Wang, Yang, Huang, Yu, Duan, Xiangfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4249642/
https://www.ncbi.nlm.nih.gov/pubmed/23241535
http://dx.doi.org/10.1038/nmat3518

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4249642/
https://www.ncbi.nlm.nih.gov/pubmed/23241535
http://dx.doi.org/10.1038/nmat3518

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