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Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwic...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4249642/ https://www.ncbi.nlm.nih.gov/pubmed/23241535 http://dx.doi.org/10.1038/nmat3518 |