Charge transport in ion-gated mono-, bi-, and trilayer MoS(2) field effect transistors

Charge transport in MoS(2) in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS(2) emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically e...

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Detalles Bibliográficos
Autores principales: Chu, Leiqiang, Schmidt, Hennrik, Pu, Jiang, Wang, Shunfeng, Özyilmaz, Barbaros, Takenobu, Taishi, Eda, Goki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4252908/
https://www.ncbi.nlm.nih.gov/pubmed/25465059
http://dx.doi.org/10.1038/srep07293

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4252908/
https://www.ncbi.nlm.nih.gov/pubmed/25465059
http://dx.doi.org/10.1038/srep07293

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