Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Tran...

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Detalles Bibliográficos
Autores principales: Cao, Yunqing, Lu, Peng, Zhang, Xiaowei, Xu, Jun, Xu, Ling, Chen, Kunji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256967/
https://www.ncbi.nlm.nih.gov/pubmed/25489285
http://dx.doi.org/10.1186/1556-276X-9-634

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256967/
https://www.ncbi.nlm.nih.gov/pubmed/25489285
http://dx.doi.org/10.1186/1556-276X-9-634

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