Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor dep...

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Detalles Bibliográficos
Autores principales: Lin, Pei-Yin, Chen, Jr-Yu, Shih, Yi-Sen, Chang, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256976/
https://www.ncbi.nlm.nih.gov/pubmed/25489282
http://dx.doi.org/10.1186/1556-276X-9-628

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256976/
https://www.ncbi.nlm.nih.gov/pubmed/25489282
http://dx.doi.org/10.1186/1556-276X-9-628

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