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Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor dep...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256976/ https://www.ncbi.nlm.nih.gov/pubmed/25489282 http://dx.doi.org/10.1186/1556-276X-9-628 |