Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

In this work, we study the impact of random interface traps (RITs) at the interface of SiO( x )/Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number...

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Detalles Bibliográficos
Autores principales: Hsu, Sheng-Chia, Li, Yiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4266504/
https://www.ncbi.nlm.nih.gov/pubmed/25520590
http://dx.doi.org/10.1186/1556-276X-9-633

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4266504/
https://www.ncbi.nlm.nih.gov/pubmed/25520590
http://dx.doi.org/10.1186/1556-276X-9-633

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