Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells

Numerical simulations are conducted to study the current-matching effect and operation mechanisms in and to design the optimized device structure of InGaN/Si tandem cells. The characteristics of short circuit current density (J(sc)), open circuit voltage (V(oc)), fill factor (FF), and conversion eff...

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Detalles Bibliográficos
Autores principales: Feng, Shih-Wei, Lai, Chih-Ming, Tsai, Chin-Yi, Tu, Li-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4266522/
https://www.ncbi.nlm.nih.gov/pubmed/25520599
http://dx.doi.org/10.1186/1556-276X-9-652

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4266522/
https://www.ncbi.nlm.nih.gov/pubmed/25520599
http://dx.doi.org/10.1186/1556-276X-9-652

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