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Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells
Numerical simulations are conducted to study the current-matching effect and operation mechanisms in and to design the optimized device structure of InGaN/Si tandem cells. The characteristics of short circuit current density (J(sc)), open circuit voltage (V(oc)), fill factor (FF), and conversion eff...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4266522/ https://www.ncbi.nlm.nih.gov/pubmed/25520599 http://dx.doi.org/10.1186/1556-276X-9-652 |