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Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga(2)O(3)) through the utilization of a so-called ammoniating process. Ga(2)O(3) nanostructures were firstly deposited on Si substrate by a simple two-terminal elec...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273690/ https://www.ncbi.nlm.nih.gov/pubmed/25593562 http://dx.doi.org/10.1186/1556-276X-9-685 |