Dislocation luminescence in GaN single crystals under nanoindentation

This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after anne...

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Detalles Bibliográficos
Autores principales: Huang, Jun, Xu, Ke, Fan, Ying Min, Wang, Jian Feng, Zhang, Ji Cai, Ren, Guo Qiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Commentary
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275118/
https://www.ncbi.nlm.nih.gov/pubmed/25593548
http://dx.doi.org/10.1186/1556-276X-9-649

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275118/
https://www.ncbi.nlm.nih.gov/pubmed/25593548
http://dx.doi.org/10.1186/1556-276X-9-649

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