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Dislocation luminescence in GaN single crystals under nanoindentation
This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after anne...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275118/ https://www.ncbi.nlm.nih.gov/pubmed/25593548 http://dx.doi.org/10.1186/1556-276X-9-649 |
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author | Huang, Jun Xu, Ke Fan, Ying Min Wang, Jian Feng Zhang, Ji Cai Ren, Guo Qiang |
author_facet | Huang, Jun Xu, Ke Fan, Ying Min Wang, Jian Feng Zhang, Ji Cai Ren, Guo Qiang |
author_sort | Huang, Jun |
collection | PubMed |
description | This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism. |
format | Online Article Text |
id | pubmed-4275118 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-42751182015-01-15 Dislocation luminescence in GaN single crystals under nanoindentation Huang, Jun Xu, Ke Fan, Ying Min Wang, Jian Feng Zhang, Ji Cai Ren, Guo Qiang Nanoscale Res Lett Nano Commentary This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism. Springer 2014-12-01 /pmc/articles/PMC4275118/ /pubmed/25593548 http://dx.doi.org/10.1186/1556-276X-9-649 Text en Copyright © 2014 Huang et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
spellingShingle | Nano Commentary Huang, Jun Xu, Ke Fan, Ying Min Wang, Jian Feng Zhang, Ji Cai Ren, Guo Qiang Dislocation luminescence in GaN single crystals under nanoindentation |
title | Dislocation luminescence in GaN single crystals under nanoindentation |
title_full | Dislocation luminescence in GaN single crystals under nanoindentation |
title_fullStr | Dislocation luminescence in GaN single crystals under nanoindentation |
title_full_unstemmed | Dislocation luminescence in GaN single crystals under nanoindentation |
title_short | Dislocation luminescence in GaN single crystals under nanoindentation |
title_sort | dislocation luminescence in gan single crystals under nanoindentation |
topic | Nano Commentary |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275118/ https://www.ncbi.nlm.nih.gov/pubmed/25593548 http://dx.doi.org/10.1186/1556-276X-9-649 |
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