Cargando…

Dislocation luminescence in GaN single crystals under nanoindentation

This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after anne...

Descripción completa

Detalles Bibliográficos
Autores principales:	Huang, Jun, Xu, Ke, Fan, Ying Min, Wang, Jian Feng, Zhang, Ji Cai, Ren, Guo Qiang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Commentary
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275118/ https://www.ncbi.nlm.nih.gov/pubmed/25593548 http://dx.doi.org/10.1186/1556-276X-9-649

Ejemplares similares

Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation
por: Jian, Sheng-Rui
Publicado: (2007)

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation
por: Wei, Tongbo, et al.
Publicado: (2009)

Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation
por: Jian, Sheng-Rui, et al.
Publicado: (2008)

Nanoscale anisotropic plastic deformation in single crystal GaN
por: Huang, Jun, et al.
Publicado: (2012)

Mechanical Properties of GaN Single Crystals upon C Ion Irradiation: Nanoindentation Analysis
por: Dong, Zhaohui, et al.
Publicado: (2022)

Nanoindentation of GaSe thin films
por: Jian, Sheng-Rui, et al.
Publicado: (2012)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Molecular Dynamics Simulation on B3-GaN Thin Films under Nanoindentation
por: Chen, Chen, et al.
Publicado: (2018)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
por: Lai, Fang-I, et al.
Publicado: (2013)

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
por: Zhang, Jin, et al.
Publicado: (2014)

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
por: Kumar, Ashutosh, et al.
Publicado: (2018)

Investigation on Surface Polarization of Al(2)O(3)-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
por: Duan, Tian Li, et al.
Publicado: (2017)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
por: He, Wei, et al.
Publicado: (2022)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence
por: Abbasi, Mazhar Ali, et al.
Publicado: (2013)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Synthesis and Characterization of Glomerate GaN Nanowires
por: Qin, Lixia, et al.
Publicado: (2009)

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
por: Duque, Carlos M, et al.
Publicado: (2012)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
por: Kuchuk, Andrian V., et al.
Publicado: (2016)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
por: Nicolai, Lars, et al.
Publicado: (2019)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In(x)Ga(1−x)N/GaN Multiple Quantum Wells
por: Chen, Cheng-Chang, et al.
Publicado: (2021)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

Review of Recent Progress on Vertical GaN-Based PN Diodes
por: Pu, Taofei, et al.
Publicado: (2021)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Blue light emission from the heterostructured ZnO/InGaN/GaN
por: Wang, Ti, et al.
Publicado: (2013)

Berkovich Nanoindentation on AlN Thin Films
por: Jian, Sheng-Rui, et al.
Publicado: (2010)

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019)

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
por: Zhao, Wan-Ru, et al.
Publicado: (2015)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
por: Lin, Meng-Hung, et al.
Publicado: (2010)

An Experimental Study of Dislocation Dynamics in GaN
por: Yakimov, Eugene B., et al.
Publicado: (2023)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_04caji815ngmo2kq6ka608ohiv