Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si s...

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Detalles Bibliográficos
Autores principales: Yu, Ing-Song, Chang, Chun-Pu, Yang, Chung-Pei, Lin, Chun-Ting, Ma, Yuan-Ron, Chen, Chun-Chi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275119/
https://www.ncbi.nlm.nih.gov/pubmed/25593560
http://dx.doi.org/10.1186/1556-276X-9-682

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275119/
https://www.ncbi.nlm.nih.gov/pubmed/25593560
http://dx.doi.org/10.1186/1556-276X-9-682

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