Memristive and neuromorphic behavior in a Li(x)CoO(2) nanobattery

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herei...

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Detalles Bibliográficos
Autores principales: Mai, V. H., Moradpour, A., Senzier, P. Auban, Pasquier, C., Wang, K., Rozenberg, M. J., Giapintzakis, J., Mihailescu, C. N., Orfanidou, C. M., Svoukis, E., Breza, A., Lioutas, Ch B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P., Agnus, G., Salot, R., Albouy, P. A., Weil, R., Alamarguy, D., March, K., Jomard, F., Chrétien, P., Schneegans, O.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4293592/
https://www.ncbi.nlm.nih.gov/pubmed/25585693
http://dx.doi.org/10.1038/srep07761

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4293592/
https://www.ncbi.nlm.nih.gov/pubmed/25585693
http://dx.doi.org/10.1038/srep07761

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