Cargando…
Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer
A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluat...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4297971/ https://www.ncbi.nlm.nih.gov/pubmed/25597295 http://dx.doi.org/10.1038/srep07860 |