Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SW...

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Detalles Bibliográficos
Autores principales: Seo, Tae Hoon, Park, Ah Hyun, Park, Sungchan, Kim, Yong Hwan, Lee, Gun Hee, Kim, Myung Jong, Jeong, Mun Seok, Lee, Young Hee, Hahn, Yoon-Bong, Suh, Eun-Kyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4297988/
https://www.ncbi.nlm.nih.gov/pubmed/25597492
http://dx.doi.org/10.1038/srep07747

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4297988/
https://www.ncbi.nlm.nih.gov/pubmed/25597492
http://dx.doi.org/10.1038/srep07747

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