Cargando…
Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes
We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SW...
Autores principales: | Seo, Tae Hoon, Park, Ah Hyun, Park, Sungchan, Kim, Yong Hwan, Lee, Gun Hee, Kim, Myung Jong, Jeong, Mun Seok, Lee, Young Hee, Hahn, Yoon-Bong, Suh, Eun-Kyung |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4297988/ https://www.ncbi.nlm.nih.gov/pubmed/25597492 http://dx.doi.org/10.1038/srep07747 |
Ejemplares similares
-
Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022) -
Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015) -
The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes
por: Seo, Tae Hoon, et al.
Publicado: (2016) -
White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010) -
Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres
por: Kim, Jonghak, et al.
Publicado: (2013)