Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and incre...

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Detalles Bibliográficos
Autores principales: Bak, Jun Yong, Kang, Youngho, Yang, Shinhyuk, Ryu, Ho-Jun, Hwang, Chi-Sun, Han, Seungwu, Yoon, Sung-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298721/
https://www.ncbi.nlm.nih.gov/pubmed/25601183
http://dx.doi.org/10.1038/srep07884

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298721/
https://www.ncbi.nlm.nih.gov/pubmed/25601183
http://dx.doi.org/10.1038/srep07884

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