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Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and incre...

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Autores principales: Bak, Jun Yong, Kang, Youngho, Yang, Shinhyuk, Ryu, Ho-Jun, Hwang, Chi-Sun, Han, Seungwu, Yoon, Sung-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298721/
https://www.ncbi.nlm.nih.gov/pubmed/25601183
http://dx.doi.org/10.1038/srep07884
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author Bak, Jun Yong
Kang, Youngho
Yang, Shinhyuk
Ryu, Ho-Jun
Hwang, Chi-Sun
Han, Seungwu
Yoon, Sung-Min
author_facet Bak, Jun Yong
Kang, Youngho
Yang, Shinhyuk
Ryu, Ho-Jun
Hwang, Chi-Sun
Han, Seungwu
Yoon, Sung-Min
author_sort Bak, Jun Yong
collection PubMed
description Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.
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spelling pubmed-42987212015-02-03 Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers Bak, Jun Yong Kang, Youngho Yang, Shinhyuk Ryu, Ho-Jun Hwang, Chi-Sun Han, Seungwu Yoon, Sung-Min Sci Rep Article Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion. Nature Publishing Group 2015-01-20 /pmc/articles/PMC4298721/ /pubmed/25601183 http://dx.doi.org/10.1038/srep07884 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Bak, Jun Yong
Kang, Youngho
Yang, Shinhyuk
Ryu, Ho-Jun
Hwang, Chi-Sun
Han, Seungwu
Yoon, Sung-Min
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
title Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
title_full Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
title_fullStr Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
title_full_unstemmed Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
title_short Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
title_sort origin of degradation phenomenon under drain bias stress for oxide thin film transistors using igzo and igo channel layers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298721/
https://www.ncbi.nlm.nih.gov/pubmed/25601183
http://dx.doi.org/10.1038/srep07884
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