Cargando…

Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and incre...

Descripción completa

Detalles Bibliográficos
Autores principales:	Bak, Jun Yong, Kang, Youngho, Yang, Shinhyuk, Ryu, Ho-Jun, Hwang, Chi-Sun, Han, Seungwu, Yoon, Sung-Min
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298721/ https://www.ncbi.nlm.nih.gov/pubmed/25601183 http://dx.doi.org/10.1038/srep07884

Ejemplares similares

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
por: Ning, Honglong, et al.
Publicado: (2021)

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors
por: Moreira, Marco, et al.
Publicado: (2019)

Origin of light instability in amorphous IGZO thin-film transistors and its suppression
por: Mativenga, Mallory, et al.
Publicado: (2021)

Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation
por: Kim, Dong-Gyu, et al.
Publicado: (2019)

Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
por: Dargar, Shashi K., et al.
Publicado: (2019)

Preparation and Properties of Crystalline IGZO Thin Films
por: Wang, Xiao, et al.
Publicado: (2021)

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors
por: Zhang, Jiawei, et al.
Publicado: (2017)

Investigation of direct inkjet-printed versus spin-coated ZrO(2) for sputter IGZO thin film transistor
por: Cai, Wei, et al.
Publicado: (2019)

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode
por: Chen, Kun-Neng, et al.
Publicado: (2017)

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil
por: Knobelspies, Stefan, et al.
Publicado: (2018)

Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
por: Shi, Qiuwei, et al.
Publicado: (2022)

High-Performance Potassium-Selective Biosensor Platform Based on Resistive Coupling of a-IGZO Coplanar-Gate Thin-Film Transistor
por: Hyun, Tae-Hwan, et al.
Publicado: (2023)

Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor
por: Chien, Feng-Tso, et al.
Publicado: (2021)

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method
por: Hsu, Chao-Ming, et al.
Publicado: (2015)

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
por: Ma, Qian, et al.
Publicado: (2018)

A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors
por: Wu, Gwomei, et al.
Publicado: (2018)

Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates
por: Park, Ki-Woong, et al.
Publicado: (2021)

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O(2) Mixed Plasma Treatment and Rapid Thermal Annealing
por: Liu, Wei-Sheng, et al.
Publicado: (2021)

Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors
por: Li, Qi, et al.
Publicado: (2022)

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors
por: Ning, Honglong, et al.
Publicado: (2017)

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
por: Fan, Ching-Lin, et al.
Publicado: (2014)

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors
por: Liu, Xianzhe, et al.
Publicado: (2018)

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
por: Wang, Dapeng, et al.
Publicado: (2018)

High-throughput immune repertoire analysis with IGoR
por: Marcou, Quentin, et al.
Publicado: (2018)

Thin-Film Transistors
por: Chien, Feng-Tso, et al.
Publicado: (2022)

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
por: Hu, Shiben, et al.
Publicado: (2016)

Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems
por: Kim, Hwi-Su, et al.
Publicado: (2023)

Structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics for a-IGZO thin-film transistors
por: Chen, Fa-Hsyang, et al.
Publicado: (2013)

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
por: Kim, Hyun-Suk, et al.
Publicado: (2013)

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
por: Yen, Te Jui, et al.
Publicado: (2020)

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer
por: Cai, Wensi, et al.
Publicado: (2017)

Liquid crystals for organic thin-film transistors
por: Iino, Hiroaki, et al.
Publicado: (2015)

Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
por: Jiang, Ran, et al.
Publicado: (2017)

Oxide thin film transistors
por: Jayaraj, MK, et al.
Publicado: (2017)

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes
por: Choi, Donghyeong, et al.
Publicado: (2023)

Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor
por: Jung, Hong Yoon, et al.
Publicado: (2014)

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
por: Zhou, Yan, et al.
Publicado: (2018)

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
por: Zhang, Ying, et al.
Publicado: (2019)

Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations
por: Wang, Ziqi, et al.
Publicado: (2023)

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors
por: Nguyen, Ky V., et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_qs5gj06lt6bijll2htgcs0bdge