Highly-ordered silicon inverted nanocone arrays with broadband light antireflectance

In this work, highly-ordered silicon inverted nanocone arrays are fabricated by integration of nanosphere lithography with reactive ion etching (RIE) method. The optical characteristics of as-prepared Si inverted nanocone arrays are investigated both by experiments and simulations. It is found that...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Dong, Ren, Weina, Zhu, Zhichao, Zhang, Haifeng, Liu, Bo, Shi, Wangzhou, Qin, Xiaomei, Cheng, Chuanwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4303704/
https://www.ncbi.nlm.nih.gov/pubmed/25635178
http://dx.doi.org/10.1186/s11671-014-0718-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4303704/
https://www.ncbi.nlm.nih.gov/pubmed/25635178
http://dx.doi.org/10.1186/s11671-014-0718-x

Ejemplares similares