Caution Is Required in Interpretation of Mutations in the Voltage Sensing Domain of Voltage Gated Channels as Evidence for Gating Mechanisms

The gating mechanism of voltage sensitive ion channels is generally considered to be the motion of the S4 transmembrane segment of the voltage sensing domains (VSD). The primary supporting evidence came from R→C mutations on the S4 transmembrane segment of the VSD, followed by reaction with a methan...

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Detalles Bibliográficos
Autores principales: Kariev, Alisher M., Green, Michael E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4307324/
https://www.ncbi.nlm.nih.gov/pubmed/25588216
http://dx.doi.org/10.3390/ijms16011627

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4307324/
https://www.ncbi.nlm.nih.gov/pubmed/25588216
http://dx.doi.org/10.3390/ijms16011627

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