Next Generation Device Grade Silicon-Germanium on Insulator

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over lar...

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Detalles Bibliográficos
Autores principales: Littlejohns, Callum G., Nedeljkovic, Milos, Mallinson, Christopher F., Watts, John F., Mashanovich, Goran Z., Reed, Graham T., Gardes, Frederic Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4319176/
https://www.ncbi.nlm.nih.gov/pubmed/25656076
http://dx.doi.org/10.1038/srep08288

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4319176/
https://www.ncbi.nlm.nih.gov/pubmed/25656076
http://dx.doi.org/10.1038/srep08288

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