Cargando…

Mn as Surfactant for the Self-Assembling of Al(x)Ga(1–x)N/GaN Layered Heterostructures

[Image: see text] The structural analysis of GaN and Al(x)Ga(1–x)N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of A...

Descripción completa

Detalles Bibliográficos
Autores principales: Devillers, Thibaut, Tian, Li, Adhikari, Rajdeep, Capuzzo, Giulia, Bonanni, Alberta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4319447/
https://www.ncbi.nlm.nih.gov/pubmed/25674041
http://dx.doi.org/10.1021/cg501144w