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Mn as Surfactant for the Self-Assembling of Al(x)Ga(1–x)N/GaN Layered Heterostructures
[Image: see text] The structural analysis of GaN and Al(x)Ga(1–x)N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of A...
Autores principales: | Devillers, Thibaut, Tian, Li, Adhikari, Rajdeep, Capuzzo, Giulia, Bonanni, Alberta |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical
Society
2015
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4319447/ https://www.ncbi.nlm.nih.gov/pubmed/25674041 http://dx.doi.org/10.1021/cg501144w |
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