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Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions
Memristive behavior has been clearly addressed through growth and shrinkage of thin filaments in metal-oxide junctions. Capacitance change has also been observed, raising the possibility of using them as memcapacitors. Therefore, this paper proves that metal-oxide junctions can behave as a memcapaci...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Hindawi Publishing Corporation
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4326217/ https://www.ncbi.nlm.nih.gov/pubmed/25705717 http://dx.doi.org/10.1155/2015/910126 |