Integration of lead-free ferroelectric on HfO(2)/Si (100) for high performance non-volatile memory applications

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO(3)-xBa(Cu(1/3)Nb(2/3))O(3) (x = 0.025) (BT-BCN) integrated on to HfO(2) buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microsc...

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Detalles Bibliográficos
Autores principales: Kundu, Souvik, Maurya, Deepam, Clavel, Michael, Zhou, Yuan, Halder, Nripendra N., Hudait, Mantu K., Banerji, Pallab, Priya, Shashank
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4329549/
https://www.ncbi.nlm.nih.gov/pubmed/25683062
http://dx.doi.org/10.1038/srep08494

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4329549/
https://www.ncbi.nlm.nih.gov/pubmed/25683062
http://dx.doi.org/10.1038/srep08494

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