Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operat...

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Detalles Bibliográficos
Autores principales: Zhao, S., Connie, A. T., Dastjerdi, M. H. T., Kong, X. H., Wang, Q., Djavid, M., Sadaf, S., Liu, X. D., Shih, I., Guo, H., Mi, Z.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4329565/
https://www.ncbi.nlm.nih.gov/pubmed/25684335
http://dx.doi.org/10.1038/srep08332

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4329565/
https://www.ncbi.nlm.nih.gov/pubmed/25684335
http://dx.doi.org/10.1038/srep08332

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