Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics....

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Detalles Bibliográficos
Autores principales: Ariño-Estrada, G., Chmeissani, M., de Lorenzo, G., Kolstein, M., Puigdengoles, C., García, J., Cabruja, E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4340550/
https://www.ncbi.nlm.nih.gov/pubmed/25729405
http://dx.doi.org/10.1088/1748-0221/9/12/C12032

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4340550/
https://www.ncbi.nlm.nih.gov/pubmed/25729405
http://dx.doi.org/10.1088/1748-0221/9/12/C12032

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