Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics....

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Autores principales: Ariño-Estrada, G., Chmeissani, M., de Lorenzo, G., Kolstein, M., Puigdengoles, C., García, J., Cabruja, E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4340550/
https://www.ncbi.nlm.nih.gov/pubmed/25729405
http://dx.doi.org/10.1088/1748-0221/9/12/C12032
_version_ 1782359036212019200
author Ariño-Estrada, G.
Chmeissani, M.
de Lorenzo, G.
Kolstein, M.
Puigdengoles, C.
García, J.
Cabruja, E.
author_facet Ariño-Estrada, G.
Chmeissani, M.
de Lorenzo, G.
Kolstein, M.
Puigdengoles, C.
García, J.
Cabruja, E.
author_sort Ariño-Estrada, G.
collection PubMed
description We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a (241)Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ(e/h) (mobility-lifetime product) are in agreement with earlier published data.
format Online
Article
Text
id pubmed-4340550
institution National Center for Biotechnology Information
language English
publishDate 2014
record_format MEDLINE/PubMed
spelling pubmed-43405502015-02-25 Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode Ariño-Estrada, G. Chmeissani, M. de Lorenzo, G. Kolstein, M. Puigdengoles, C. García, J. Cabruja, E. J Instrum Article We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a (241)Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ(e/h) (mobility-lifetime product) are in agreement with earlier published data. 2014-12-01 /pmc/articles/PMC4340550/ /pubmed/25729405 http://dx.doi.org/10.1088/1748-0221/9/12/C12032 Text en http://creativecommons.org/licenses/by/3.0/ Content from this work may be used under the terms of the Creative Commons Attribution 3.0 License (http://creativecommons.org/licenses/by/3.0/) . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. doi:10.1088/1748-0221/9/12/C12032 (http://dx.doi.org/10.1088/1748-0221/9/12/C12032)
spellingShingle Article
Ariño-Estrada, G.
Chmeissani, M.
de Lorenzo, G.
Kolstein, M.
Puigdengoles, C.
García, J.
Cabruja, E.
Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
title Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
title_full Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
title_fullStr Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
title_full_unstemmed Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
title_short Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
title_sort measurement of mobility and lifetime of electrons and holes in a schottky cdte diode
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4340550/
https://www.ncbi.nlm.nih.gov/pubmed/25729405
http://dx.doi.org/10.1088/1748-0221/9/12/C12032
work_keys_str_mv AT arinoestradag measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode
AT chmeissanim measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode
AT delorenzog measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode
AT kolsteinm measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode
AT puigdengolesc measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode
AT garciaj measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode
AT cabrujae measurementofmobilityandlifetimeofelectronsandholesinaschottkycdtediode

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