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Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode
We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics....
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4340550/ https://www.ncbi.nlm.nih.gov/pubmed/25729405 http://dx.doi.org/10.1088/1748-0221/9/12/C12032 |