Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots

Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the “off” period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the def...

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Detalles Bibliográficos
Autores principales: Hu, Fengrui, Cao, Zengle, Zhang, Chunfeng, Wang, Xiaoyong, Xiao, Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4354043/
https://www.ncbi.nlm.nih.gov/pubmed/25754220
http://dx.doi.org/10.1038/srep08898

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4354043/
https://www.ncbi.nlm.nih.gov/pubmed/25754220
http://dx.doi.org/10.1038/srep08898

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