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Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the “off” period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the def...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4354043/ https://www.ncbi.nlm.nih.gov/pubmed/25754220 http://dx.doi.org/10.1038/srep08898 |