Hall and field-effect mobilities in few layered p-WSe(2) field-effect transistors

Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe(2) exfoliated onto SiO(2). Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approach...

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Detalles Bibliográficos
Autores principales: Pradhan, N. R., Rhodes, D., Memaran, S., Poumirol, J. M., Smirnov, D., Talapatra, S., Feng, S., Perea-Lopez, N., Elias, A. L., Terrones, M., Ajayan, P. M., Balicas, L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4355631/
https://www.ncbi.nlm.nih.gov/pubmed/25759288
http://dx.doi.org/10.1038/srep08979

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4355631/
https://www.ncbi.nlm.nih.gov/pubmed/25759288
http://dx.doi.org/10.1038/srep08979

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