Highly textured and transparent RF sputtered Eu(2)O(3) doped ZnO films

BACKGROUND: Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. METHODS: Europium oxide (Eu(2)O(3)) doped ZnO films are...

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Detalles Bibliográficos
Autores principales: Sreedharan, Remadevi Sreeja, Ganesan, Vedachalaiyer, Sudarsanakumar, Chellappan Pillai, Bhavsar, Kaushalkumar, Prabhu, Radhakrishna, Mahadevan Pillai, Vellara Pappukutty Pillai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Co-Action Publishing 2015
Materias:
Nanostruc 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4357640/
https://www.ncbi.nlm.nih.gov/pubmed/25765728
http://dx.doi.org/10.3402/nano.v6.26759

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4357640/
https://www.ncbi.nlm.nih.gov/pubmed/25765728
http://dx.doi.org/10.3402/nano.v6.26759

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