The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition

Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternati...

Descripción completa

Detalles Bibliográficos
Autores principales: Kuwahara, Takuya, Ito, Hiroshi, Kawaguchi, Kentaro, Higuchi, Yuji, Ozawa, Nobuki, Kubo, Momoji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4360731/
https://www.ncbi.nlm.nih.gov/pubmed/25772469
http://dx.doi.org/10.1038/srep09052

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4360731/
https://www.ncbi.nlm.nih.gov/pubmed/25772469
http://dx.doi.org/10.1038/srep09052

Ejemplares similares