Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO(2) and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO(2), (ii) implantation prean...

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Detalles Bibliográficos
Autores principales: Toinin, Jacques Perrin, Portavoce, Alain, Hoummada, Khalid, Texier, Michaël, Bertoglio, Maxime, Bernardini, Sandrine, Abbarchi, Marco, Chow, Lee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2015
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4362477/
https://www.ncbi.nlm.nih.gov/pubmed/25821672
http://dx.doi.org/10.3762/bjnano.6.32

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4362477/
https://www.ncbi.nlm.nih.gov/pubmed/25821672
http://dx.doi.org/10.3762/bjnano.6.32

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